Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/25043
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dc.contributor.authorAlay, Josep Lluíscat
dc.contributor.authorVandervorst, Wilfriedcat
dc.date.accessioned2012-05-08T07:09:09Z-
dc.date.available2012-05-08T07:09:09Z-
dc.date.issued1992-
dc.identifier.issn0734-2101-
dc.identifier.urihttp://hdl.handle.net/2445/25043-
dc.description.abstractThe oxidation of GaAs and AlGaAs targets subjected to O2+ bombardment has been analyzed, using in situ x¿ray photoelectron spectroscopy, as a function of time until steady state is reached. The oxides formed by the O2+ bombardment have been characterized in terms of composition and binding energy. A strong energy and angular dependence for the oxidation of As relative to Ga is found. Low energies as well as near normal angles of incidence favor the oxidation of As. The difference between Ga and As can be explained in terms of the formation enthalpy for the oxide and the excess supply of oxygen. In an AlGaAs target the Al is very quickly completely oxidized irrespective of the experimental conditions. The steady state composition of the altered layers show in all cases a preferential removal of As.eng
dc.format.extent5 p.-
dc.format.mimetypeapplication/pdf-
dc.language.isoeng-
dc.publisherAmerican Institute of Physics-
dc.relation.isformatofReproducció del document publicat a: http://dx.doi.org/10.1116/1.577731-
dc.relation.ispartofJournal of Vacuum Science Technology A-Vacuum Surfaces and Films, 1992, vol. 10, p. 2926-2930-
dc.relation.isbasedonArticles publicats en revistes (Enginyeria Electrònica i Biomèdica)-
dc.relation.urihttp://dx.doi.org/10.1116/1.577731-
dc.rights(c) American Institute of Physics, 1992-
dc.subject.classificationSemiconductorscat
dc.subject.classificationMicroelectrònicacat
dc.subject.classificationQuímica analíticacat
dc.subject.classificationEspectroscòpia d'electronscat
dc.subject.otherSemiconductorseng
dc.subject.otherMicroelectronicseng
dc.subject.otherAnalytical chemistryeng
dc.subject.otherElectron spectroscopyeng
dc.titleX-ray photoelectron spectroscopy analysis of ion¿beam¿induced oxidation of GaAs and AlGaAseng
dc.typeinfo:eu-repo/semantics/article-
dc.typeinfo:eu-repo/semantics/publishedVersion-
dc.identifier.idgrec109542-
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess-
Appears in Collections:Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

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