Please use this identifier to cite or link to this item:
http://hdl.handle.net/2445/32224| Title: | The valence band alignment at ultrathin SiO2/Si interfaces |
| Author: | Alay, Josep Lluís Hirose, M. |
| Keywords: | Semiconductors Interfícies (Ciències físiques) Semiconductors Interfaces (Physical sciences) |
| Issue Date: | 1997 |
| Publisher: | American Institute of Physics |
| Abstract: | High resolution x-ray photoelectron spectroscopy has been used to determine the valence band alignment at ultrathin SiO2/Si interfaces. In the oxide thickness range 1.6-4.4 nm the constant band-offset values of 4.49 and 4.43 eV have been obtained for the dry SiO2/Si(100) and the wet SiO2/Si(100) interfaces, respectively. The valence band alignment of dry SiO2/Si(111) (4.36 eV) is slightly smaller than the case of the dry SiO2/Si(100) interface. |
| Note: | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.363895 |
| It is part of: | Journal of Applied Physics, 1997, vol. 81, num. 3, p. 1606-1608 |
| URI: | http://hdl.handle.net/2445/32224 |
| Related resource: | http://dx.doi.org/10.1063/1.363895 |
| ISSN: | 0021-8979 |
| Appears in Collections: | Articles publicats en revistes (Història i Arqueologia) |
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| File | Description | Size | Format | |
|---|---|---|---|---|
| 567525.pdf | 55.22 kB | Adobe PDF | View/Open |
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