Search
Add filters:
Use filters to refine the search results.
Results 1-7 of 7 (Search time: 0.02 seconds).
- previous
- 1
- next
Item hits:
| Issue Date | Title | Author(s) |
|---|---|---|
| 1-Dec-1984 | Reconstruction of the SiO2 structure damaged by low-energy Ar-implanted ions | Garrido Fernández, Blas; Samitier i Martí, Josep; Bota Ferragut, Sebastián Antonio; Moreno, J. A.; Montserrat i Martí, Josep; Morante i Lleonart, Joan Ramon |
| 15-Feb-1997 | Analysis of geometrical effects on the behavior of transverse and longitudinal modes of amorphous silicon compounds | Moreno, J. A.; Garrido Fernández, Blas; Samitier i Martí, Josep; Morante i Lleonart, Joan Ramon |
| 1994 | Configurational statistical model for the damaged structure of silicon oxide after ion implantation | Garrido Beltrán, Lluís; Samitier i Martí, Josep; Morante i Lleonart, Joan Ramon; Montserrat i Martí, Josep; Domínguez, Carlos (Domínguez Horna) |
| 1992 | Anomalous optical and electrical recovery process of photoquenched EL2 defect produced by oxygen and boron ion implantation in gallium arsenide | Samitier i Martí, Josep; Marco Colás, Santiago; Pérez Rodríguez, Alejandro; Morante i Lleonart, Joan Ramon; Boher, P.; Renaud, M. |
| 1991 | On the artificial creation of the EL2 center by means of boron implantation in gallium arsenide | Morante i Lleonart, Joan Ramon; Pérez Rodríguez, Alejandro; Samitier i Martí, Josep; Romano Rodríguez, Albert |
| 1986 | Majority carrier capture cross section determination in the large deep trap concentration cases | Morante i Lleonart, Joan Ramon; Samitier i Martí, Josep; Cornet i Calveras, Albert; Herms Berenguer, Atilà; Cartujo Estébanez, Pedro |
| 1986 | Analysis of the near-intrinsic and extrinsic photocapacitance due to the EL2 level in boron implanted GaAs | Morante i Lleonart, Joan Ramon; Samitier i Martí, Josep; Pérez Rodríguez, Alejandro; Altelarrea Soria, Hermenegildo; Gourrier, S. |
Discover
Subject
Date issued