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http://hdl.handle.net/2445/8624
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DC Field | Value | Language |
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dc.contributor.author | Wang, Jianguo | cat |
dc.contributor.author | Freitas, P. P. | cat |
dc.contributor.author | Snoeck, E. | cat |
dc.contributor.author | Batlle Gelabert, Xavier | cat |
dc.contributor.author | Cuadra, J. | cat |
dc.date.accessioned | 2009-06-12T08:34:27Z | - |
dc.date.available | 2009-06-12T08:34:27Z | - |
dc.date.issued | 2002 | cat |
dc.identifier.issn | 0018-9464 | ca |
dc.identifier.uri | http://hdl.handle.net/2445/8624 | - |
dc.description.abstract | Spin-dependent tunnel junctions with the structure (Ta 70 /spl Aring//NiFe 70 /spl Aring//MnIr 80 /spl Aring//CoFe 35 /spl Aring//HfAlO/sub x//CoFe 35 /spl Aring//NiFe 40 /spl Aring//TiW(N) 150 /spl Aring/) were fabricated on top of 600-/spl Aring/-thick ion-beam-smoothed low-resistance Al electrodes. HfAlO/sub x/ barriers were formed by natural oxidation (5 min at 1 torr in pure O/sub 2/) of 5-/spl Aring/-thick (2-/spl Aring/ Hf+3-/spl Aring/ Al) films or 6-/spl Aring/-thick (2-/spl Aring/ Hf+4-/spl Aring/ Al) films. Resistance/spl times/area (R/spl times/A) products of 0.65 /spl Omega//spl times//spl mu//sup 2/ and 2.1 /spl Omega//spl times//spl mu/m/sup 2/ were achieved with 9.5% and 13.5% tunnel magnetoresistance signal (TMR), respectively. Current inhomogeneity effects on the measured (R/spl times/A) products and TMR values were calculated in particular for junctions with resistance below 1 /spl Omega//spl times//spl mu/m/sup 2/. Transmission electron microscopy indicates that HfAlO/sub x/ forms a continuous amorphous barrier that follows conformally the topography of the bottom electrode. X-ray photoelectron spectroscopy analysis indicates that 2.5% metallic Hf is left inside the barrier closer to the bottom electrode. These low-resistance tunnel junctions are attractive for read-head applications at recording densities above 100 Gbit/in/sup 2/. | - |
dc.format.extent | 3 p. | cat |
dc.format.mimetype | application/pdf | eng |
dc.language.iso | eng | eng |
dc.publisher | IEEE | cat |
dc.relation.isformatof | Reproducció del document publicat a http://dx.doi.org/10.1109/TMAG.2002.803175 | cat |
dc.relation.ispartof | IEEE Transactions on Magnetics, 2002, vol. 38, núm. 5 (Part 1), p. 2703-2705. | cat |
dc.relation.uri | http://dx.doi.org/10.1109/TMAG.2002.803175 | - |
dc.rights | (c) IEEE, 2002 | cat |
dc.source | Articles publicats en revistes (Física de la Matèria Condensada) | - |
dc.subject.classification | Espectroscòpia de raigs X | cat |
dc.subject.classification | Espectroscòpia d'electrons | cat |
dc.subject.classification | Compostos de metalls de transició | cat |
dc.subject.classification | Electromagnetisme | cat |
dc.subject.classification | Microscòpia electrònica de transmissió | cat |
dc.subject.classification | Efecte túnel | cat |
dc.subject.other | X-ray spectroscopy | eng |
dc.subject.other | Electron spectroscopy | eng |
dc.subject.other | Transition metal compounds | eng |
dc.subject.other | Electromagnetism | eng |
dc.subject.other | Transmission electron microscopy | eng |
dc.subject.other | Tunneling (Physics) | eng |
dc.title | Low-resistance spin-dependent tunnel junctions with HfAlOx barriers for high-density recording-head application | cat |
dc.type | info:eu-repo/semantics/article | eng |
dc.type | info:eu-repo/semantics/publishedVersion | - |
dc.identifier.idgrec | 501441 | cat |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Física de la Matèria Condensada) |
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File | Description | Size | Format | |
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501441.pdf | 65.89 kB | Adobe PDF | View/Open |
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