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Title: | Low-resistance spin-dependent tunnel junctions with HfAlOx barriers for high-density recording-head application |
Author: | Wang, Jianguo Freitas, P. P. Snoeck, E. Batlle Gelabert, Xavier Cuadra, J. |
Keywords: | Espectroscòpia de raigs X Espectroscòpia d'electrons Compostos de metalls de transició Electromagnetisme Microscòpia electrònica de transmissió Efecte túnel X-ray spectroscopy Electron spectroscopy Transition metal compounds Electromagnetism Transmission electron microscopy Tunneling (Physics) |
Issue Date: | 2002 |
Publisher: | IEEE |
Abstract: | Spin-dependent tunnel junctions with the structure (Ta 70 /spl Aring//NiFe 70 /spl Aring//MnIr 80 /spl Aring//CoFe 35 /spl Aring//HfAlO/sub x//CoFe 35 /spl Aring//NiFe 40 /spl Aring//TiW(N) 150 /spl Aring/) were fabricated on top of 600-/spl Aring/-thick ion-beam-smoothed low-resistance Al electrodes. HfAlO/sub x/ barriers were formed by natural oxidation (5 min at 1 torr in pure O/sub 2/) of 5-/spl Aring/-thick (2-/spl Aring/ Hf+3-/spl Aring/ Al) films or 6-/spl Aring/-thick (2-/spl Aring/ Hf+4-/spl Aring/ Al) films. Resistance/spl times/area (R/spl times/A) products of 0.65 /spl Omega//spl times//spl mu//sup 2/ and 2.1 /spl Omega//spl times//spl mu/m/sup 2/ were achieved with 9.5% and 13.5% tunnel magnetoresistance signal (TMR), respectively. Current inhomogeneity effects on the measured (R/spl times/A) products and TMR values were calculated in particular for junctions with resistance below 1 /spl Omega//spl times//spl mu/m/sup 2/. Transmission electron microscopy indicates that HfAlO/sub x/ forms a continuous amorphous barrier that follows conformally the topography of the bottom electrode. X-ray photoelectron spectroscopy analysis indicates that 2.5% metallic Hf is left inside the barrier closer to the bottom electrode. These low-resistance tunnel junctions are attractive for read-head applications at recording densities above 100 Gbit/in/sup 2/. |
Note: | Reproducció del document publicat a http://dx.doi.org/10.1109/TMAG.2002.803175 |
It is part of: | IEEE Transactions on Magnetics, 2002, vol. 38, núm. 5 (Part 1), p. 2703-2705. |
URI: | http://hdl.handle.net/2445/8624 |
Related resource: | http://dx.doi.org/10.1109/TMAG.2002.803175 |
ISSN: | 0018-9464 |
Appears in Collections: | Articles publicats en revistes (Física de la Matèria Condensada) |
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