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Thin silicon films ranging from amorphous to nanocrystalline obtained by Hot-Wire CVD
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In this paper, we have presented results on silicon thin films deposited by hot-wire CVD at low substrate temperatures (200 °C). Films ranging from amorphous to nanocrystalline were obtained by varying the filament temperature from 1500 to 1800 °C. A crystalline fraction of 50% was obtained for the sample deposited at 1700 °C. The results obtained seemed to indicate that atomic hydrogen plays a leading role in the obtaining of nanocrystalline silicon. The optoelectronic properties of the amorphous material obtained in these conditions are slightly poorer than the ones observed in device-grade films grown by plasma-enhanced CVD due to a higher hydrogen incorporation (13%).
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SOLER VILAMITJANA, David, FONRODONA TURON, Marta, VOZ SÁNCHEZ, Cristóbal, BERTOMEU I BALAGUERÓ, Joan, ANDREU I BATALLÉ, Jordi. Thin silicon films ranging from amorphous to nanocrystalline obtained by Hot-Wire CVD. _Thin Solid Films_. 2001. Vol. 383, núm. 1-2, pàgs. 189-191. [consulta: 27 de gener de 2026]. ISSN: 0040-6090. [Disponible a: https://hdl.handle.net/2445/47380]