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2001

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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/47380

Thin silicon films ranging from amorphous to nanocrystalline obtained by Hot-Wire CVD

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http://dx.doi.org/10.1016/S0040-6090(00)01615-1

Abstract

In this paper, we have presented results on silicon thin films deposited by hot-wire CVD at low substrate temperatures (200 °C). Films ranging from amorphous to nanocrystalline were obtained by varying the filament temperature from 1500 to 1800 °C. A crystalline fraction of 50% was obtained for the sample deposited at 1700 °C. The results obtained seemed to indicate that atomic hydrogen plays a leading role in the obtaining of nanocrystalline silicon. The optoelectronic properties of the amorphous material obtained in these conditions are slightly poorer than the ones observed in device-grade films grown by plasma-enhanced CVD due to a higher hydrogen incorporation (13%).

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Silici, Pel·lícules fines, Nanocristalls, Deposició en fase de vapor, Cèl·lules solars

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Silicon, Thin films, Nanocrystals, Vapor-plating, Solar cells

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SOLER VILAMITJANA, David, et al. Thin silicon films ranging from amorphous to nanocrystalline obtained by Hot-Wire CVD. Thin Solid Films. 2001. Vol. 383, num. 1-2, pags. 189-191. ISSN 0040-6090. [consulted: 9 of June of 2026]. Available at: https://hdl.handle.net/2445/47380

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