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Electrical pump & probe and injected carrier losses quantification in Er doped Si slot waveguides
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Electrically driven Er3+ doped Si slot waveguides emitting at 1530 nm are demonstrated. Two different Er3+ doped active layers were fabricated in the slot region: a pure SiO2 and a Si-rich oxide. Pulsed polarization driving of the waveguides was used to characterize the time response of the electroluminescence (EL) and of the signal probe transmission in 1 mm long waveguides. Injected carrier absorption losses modulate the EL signal and, since the carrier lifetime is much smaller than that of Er3+ ions, a sharp EL peak was observed when the polarization was switched off. A time-resolved electrical pump & probe measurement in combination with lock-in amplifier techniques allowed to quantify the injected carrier absorption losses. We found an extinction ratio of 6 dB, passive propagation losses of about 4 dB/mm, and a spectral bandwidth > 25 nm at an effective d.c. power consumption of 120 μW. All these performances suggest the usage of these devices as electro-optical modulators.
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RAMÍREZ RAMÍREZ, Joan manel, BERENCÉN RAMÍREZ, Yonder antonio, FERRARESE LUPI, Federico, NAVARRO URRIOS, Daniel, ANOPCHENKO, Aleksei, TENGATTINI, Andrea, PRTLJAGA, Nikola, PAVESI, Lorenzo, RIVALLIN, P., FEDELI, Jean-marc, GARRIDO FERNÁNDEZ, Blas. Electrical pump & probe and injected carrier losses quantification in Er doped Si slot waveguides. _Optics Express_. 2012. Vol. 20, núm. 27, pàgs. 28808-28818. [consulta: 21 de gener de 2026]. ISSN: 1094-4087. [Disponible a: https://hdl.handle.net/2445/44746]