Miniatura

Fitxers

147811.pdf (159.83 KB)

Tipus de document

Article

Versió

Versió acceptada

Data de publicació

1999

Tots els drets reservats

Si us plau utilitzeu sempre aquest identificador per citar o enllaçar aquest document: https://hdl.handle.net/2445/47422

Investigation of defect formation and electronic transport in microcrystalline silicon deposited by hot-wire CVD

Títol de la revista

Autors

Director/Tutor

ISSN de la revista

Títol del volum

Recurs relacionat

http://dx.doi.org/10.1016/S0921-4526(99)00568-2

Resum

We have investigated doped and undoped layers of microcrystalline silicon prepared by hot-wire chemical vapour deposition optically, electrically and by means of transmission electron microscopy. Besides needle-like crystals grown perpendicular to the substrate's surface, all of the layers contained a noncrystalline phase with a volume fraction between 4% and 25%. A high oxygen content of several per cent in the porous phase was detected by electron energy loss spectrometry. Deep-level transient spectroscopy of the crystals suggests that the concentration of electrically active defects is less than 1% of the undoped background concentration of typically 10^17 cm -3. Frequency-dependent measurements of the conductance and capacitance perpendicular to the substrate surface showed that a hopping process takes place within the noncrystalline phase parallel to the conduction in the crystals. The parasitic contribution to the electrical circuit arising from the porous phase is believed to be an important loss mechanism in the output of a pin-structured photovoltaic solar cell deposited by hot-wire CVD.

Matèries

Silici, Deposició química en fase vapor, Microscòpia electrònica de transmissió, Potenciometria, Nanotecnologia

Matèries (anglès)

Silicon, Chemical vapor deposition, Transmission electron microscopy, Potentiometry, Nanotechnology

Citació

Col·leccions

Articles publicats en revistes (Física Aplicada)

Citació

STÖGER, M., BREYMESSER, A., SCHLOSSER, V., RAMADORI, M., PLUNGER, V., PEIRÓ, D., VOZ SÁNCHEZ, Cristóbal, BERTOMEU I BALAGUERÓ, Joan, NELHIEBEL, M., SCHATTSCHNEIDER, P., ANDREU I BATALLÉ, Jordi. Investigation of defect formation and electronic transport in microcrystalline silicon deposited by hot-wire CVD. _Physica B_. 1999. Vol. 273-274, núm. 540-543. [consulta: 25 de gener de 2026]. ISSN: 0921-4526. [Disponible a: https://hdl.handle.net/2445/47422]

Exportar metadades

JSON - METS

Compartir registre