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Article

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Accepted version

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2001

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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/47606

Optoelectronic studies in nanocrystalline silicon Schottky diodes obtained by Hot-Wire Chemical Vapour Deposition

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http://dx.doi.org/10.1016/S0040-6090(00)01574-1

Abstract

The very usual columnar growth of nanocrystalline silicon leads to electronic transport anisotropies. Whereas electrical measurements with coplanar electrodes only provide information about the electronic transport parallel to the substrate, it is the transverse transport which determines the collection efficiency in thin film solar cells. Hence, Schottky diodes on transparent electrodes were obtained by hot-wire CVD in order to perform external quantum efficiency and surface photovoltage studies in sandwich configuration. These measurements allowed to calculate a transverse collection length, which must correlate with the photovoltaic performance of thin film solar cells. Furthermore, the density of charge trapped at localized states in the bandgap was estimated from the voltage dependence of the depletion capacitance of these rectifying contacts.

Subject

Optoelectrònica, Silici, Nanocristalls, Deposició química en fase vapor, Cèl·lules solars

Subject (English)

Optoelectronics, Silicon, Nanocrystals, Chemical vapor deposition, Solar cells

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Articles publicats en revistes (Física Aplicada)

Citation

VOZ SÁNCHEZ, Cristóbal, et al. Optoelectronic studies in nanocrystalline silicon Schottky diodes obtained by Hot-Wire Chemical Vapour Deposition. Thin Solid Films. 2001. Vol. 383, num. 1-2, pags. 258-260. ISSN 0040-6090. [consulted: 8 of August of 2026]. Available at: https://hdl.handle.net/2445/47606

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