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2012

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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/28682

A gated single-photon avalanche diode array fabricated in a conventional CMOS process for triggered systems

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Abstract

A bidimensional array based on single-photon avalanche diodes for triggered imaging systems is presented. The diodes are operated in the gated mode of acquisition to reduce the probability to detect noise counts interfering with photon arrival events. In addition, low reverse bias overvoltages are used to lessen the dark count rate. Experimental results demonstrate that the prototype fabricated with a standard HV-CMOS process gets rid of afterpulses and offers a reduced dark count probability by applying the proposed modes of operation. The detector exhibits a dynamic range of 15 bits with short gated"on" periods of 10ns and a reverse bias overvoltage of 1.0V.

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http://dx.doi.org/10.1016/j.sna.2012.01.019

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Metall-òxid-semiconductors complementaris, Electrònica, Díodes, Detectors

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Complementary metal oxide semiconductors, Electronics, Diodes, Detectors

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Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

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VILELLA FIGUERAS, Eva and DIÉGUEZ BARRIENTOS, Àngel. A gated single-photon avalanche diode array fabricated in a conventional CMOS process for triggered systems. Sensors and Actuators A-Physical. 2012. Vol. 186, num. 1-6. ISSN 0924-4247. [consulted: 6 of October of 2026]. Available at: https://hdl.handle.net/2445/28682

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