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1997

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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/47604

Infrared characterization of a-Si:H/a-Si1-xCx:H interfaces

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http://dx.doi.org/10.1016/S0169-4332(96)00600-9

Abstract

Infrared spectroscopy was used to characterize three series of a-Si:H/a-Si1-xCx:H multilayers in which their geometrical parameters were varied. The infrared active vibrational groups in their spectra and the interference fringes in their absorption-free zone were studied to analyze the interfaces and the changes that are produced in very thin layers. Our results show that hydrogen is bonded to silicon only in monohydride groups. No additional hydrogen could be detected at these interfaces. The deposition of very thin a-Si1-xCx:H layers seems to affect their porous structure, making them denser.

Subject

Espectroscòpia infraroja, Pel·lícules fines, Hidrogen, Semiconductors amorfs, Porositat

Subject (English)

Infrared spectroscopy, Thin films, Hydrogen, Amorphous semiconductors, Porosity

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Articles publicats en revistes (Física Aplicada)

Citation

BERTOMEU I BALAGUERÓ, Joan, et al. Infrared characterization of a-Si:H/a-Si1-xCx:H interfaces. Applied Surface Science. 1997. Vol. 108, num. 2, pags. 211-217. ISSN 0169-4332. [consulted: 20 of August of 2026]. Available at: https://hdl.handle.net/2445/47604

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