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Competitive evolution of the fine contrast modulation and CuPt ordering in InGaP/GaAs layers
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We use transmission electron microscopy to characterize the morphology of InGaP epitaxial layers grown by metal‐organic vapor‐phase epitaxy over misoriented GaAs (001) substrates, with a cutoff angle in a range from 0° to 25°. The occurrence of phase separation and CuPt‐type ordered superstructures has been observed. The most ordered configuration has been found to appear in layers grown on 2° off substrates, and the strength of order decreases with increasing the misorientation angle beyond α=2°. Conversely, whereas the phase separation is less evident in the layer grown at 2°, the sample grown with a misorientation of 25° exhibits the most phase separated configuration. The completion between these two phenomena is discussed depending on the misorientation angle.
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DIÉGUEZ BARRIENTOS, Àngel, et al. Competitive evolution of the fine contrast modulation and CuPt ordering in InGaP/GaAs layers. Journal of Applied Physics. 1996. Vol. 80, num. 7, pags. 3798-3803. ISSN 0021-8979. [consulted: 17 of August of 2026]. Available at: https://hdl.handle.net/2445/24797