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2000-09

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Si us plau utilitzeu sempre aquest identificador per citar o enllaçar aquest document: https://hdl.handle.net/2445/25055

Properties of nitrogen doped silicon films deposited by low-pressure chemical vapor deposition from silane and ammonia

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http://dx.doi.org/10.1116/1.1286714

Resum

Nitrogen doped silicon (NIDOS) films have been deposited by low-pressure chemical vapor deposition from silane SiH4 and ammonia NH3 at high temperature (750°C) and the influences of the NH3/SiH4 gas ratio on the films deposition rate, refractive index, stoichiometry, microstructure, electrical conductivity, and thermomechanical stress are studied. The chemical species derived from silylene SiH2 into the gaseous phase are shown to be responsible for the deposition of NIDOS and/or (silicon rich) silicon nitride. The competition between these two deposition phenomena leads finally to very high deposition rates (100 nm/min) for low NH3/SiH4 gas ratio (R¿0.1). Moreover, complex variations of NIDOS film properties are evidenced and related to the dual behavior of the nitrogen atom into silicon, either n-type substitutional impurity or insulative intersticial impurity, according to the Si¿N atomic bound. Finally, the use of NIDOS deposition for the realization of microelectromechanical systems is investigated.

Matèries

Pel·lícules fines, Electroquímica, Nitrurs, Microelectrònica

Matèries (anglès)

Thin films, Electrochemistry, Nitrides, Microelectronics

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Col·leccions

Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

Citació

TEMPLE BOYER, Pierre, et al. Properties of nitrogen doped silicon films deposited by low-pressure chemical vapor deposition from silane and ammonia. Journal of Vacuum Science Technology A-Vacuum Surfaces and Films. 2000. Vol. 18, num. 2389-2393. ISSN 0734-2101. [consulted: 15 of August of 2026]. Available at: https://hdl.handle.net/2445/25055

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