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Treball de fi de màster

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cc-by-nc-nd (c) Montes, 2022
Si us plau utilitzeu sempre aquest identificador per citar o enllaçar aquest document: https://hdl.handle.net/2445/204929

Development of a SILAR-based technology for the deposition of nanometer layers with controlled thickness for photovoltaic applications

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The world of renewable energies, more specifically the photovoltaic energy, is a necessary technological source for humans and for the planet, but like all technological sources it is progressing. This progress it's related to a constant development of new materials and new technologies that must comply the photoelectrical requirements demanded by a photovoltaic device. As a booming material and technology, Cadmium Sulfide (CdS) thin films and Successive Ionic Layer Adsorption and Reaction (SILAR) process will be discussed in depth and how to improve and adapt it according to the needs of the device. Due to the fact carrying out this Final Master Project together with the help of the Energy Research Institute of Catalonia (IREC), a detailed study of improvements will be made by SILAR process. Through these experiments, different variables of SILAR will be optimized to obtain a thin layer for place it as a n-buffer and try to be able to replace the previous method used in IREC, Chemical Bath Deposition (CBD). The main objective of this project is to optimize SILAR process for place a CdS n-buffer layer on a photovoltaic device. So, thanks to the bibliographic search and the results of other investigations, certain conclusions have been reached that indicate that the desired objective is well on its way to being achieved.

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Treballs Finals de Màster d'Enginyeria Química, Facultat de Química, Universitat de Barcelona. Curs: 2021-2022. Tutors: Joan Dosta Parras, Yudania Sánchez González

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MONTES ÁLVAREZ, Manuel eduardo. Development of a SILAR-based technology for the deposition of nanometer layers with controlled thickness for photovoltaic applications. [consulta: 28 de novembre de 2025]. [Disponible a: https://hdl.handle.net/2445/204929]

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