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Article

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Published version

Publication date

2004

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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/10534

Design of electron band pass filters for electrically biased finite superlattices

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http://dx.doi.org/10.1103/PhysRevB.69.115309

Abstract

We design optimal band pass filters for electrons in semiconductor heterostructures, under a uniform applied electric field. The inner cells are chosen to provide a desired transmission window. The outer cells are then designed to transform purely incoming or outgoing waves into Bloch states of the inner cells. The transfer matrix is interpreted as a conformal mapping in the complex plane, which allows us to write constraints on the outer cell parameters, from which physically useful values can be obtained.

Subject

Semiconductors, Transport d'electrons

Subject (English)

Semiconductors, Electron transport

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Articles publicats en revistes (Física Quàntica i Astrofísica)

Citation

MARTORELL DOMENECH, Juan, SPRUNG, Donald W. L. and MOROZOV, Gregory V. Design of electron band pass filters for electrically biased finite superlattices. Physical Review B. 2003. Vol. 69, num. 11, pags. 115309(1)-115309(10). ISSN 0163-1829. [consulted: 12 of August of 2026]. Available at: https://hdl.handle.net/2445/10534

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