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Published version

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1997-02-15

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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/24762

Analysis of geometrical effects on the behavior of transverse and longitudinal modes of amorphous silicon compounds

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http://dx.doi.org/10.1063/1.364049

Abstract

The peak frequency, width, and shape of the transverse-optical (TO) and longitudinal-optical (LO) infrared absorption modes of silicon oxides (SiO2, SiOx), silicon nitrides (Si3N4, SiNx), silicon oxynitrides (SiOxNy), and other silicon compounds have often been connected with stress, stoichiometry, defects, structural order, and other properties of the layers. However, certain geometrical effects strongly influence the spectral response of the material independent of its physical or structural properties. The influence of layer thickness, multilayer configuration, substrate effects, angles, and polarization on the behavior of TO and LO bands are presented and discussed. Some corrections are suggested to reduce experimental error and for the reliable measurement of stress, composition, disorder, and structure.

Subject

Espectroscòpia, Compostos de silici

Subject (English)

Spectrum analysis, Silicon compounds

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Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

Citation

MORENO, J. A., et al. Analysis of geometrical effects on the behavior of transverse and longitudinal modes of amorphous silicon compounds. Journal of Applied Physics. 1997. Vol. 81, num. 4, pags. 1933-1942. ISSN 0021-8979. [consulted: 16 of August of 2026]. Available at: https://hdl.handle.net/2445/24762

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