Amb motiu del tancament d'estiu, la validació de documents es reprendrà a partir del 28 d'agost de 2026. Disculpeu les molèsties.
Con motivo del cierre de verano, la validación de documentos se reanudará a partir del 28 de agosto de 2026. Disculpad las molestias
Due to the summer closure, document validation will resume starting August 28, 2026. We apologize for any inconvenience.

Tipus de document

Article

Versió

Versió publicada

Data de publicació

Tots els drets reservats

Si us plau utilitzeu sempre aquest identificador per citar o enllaçar aquest document: https://hdl.handle.net/2445/9846

Evidence for two different bonding mechanisms of Al on Si(111)

Títol de la revista

Director/Tutor

ISSN de la revista

Títol del volum

Resum

By means of the ab initio cluster-model approach, we present theoretical evidence for two different mechanisms of bonding of atomic Al to Si(111). On the atop site (T1) the interaction of atomic Al to Si(111) is characteristic of an ionic bond whereas interaction above the threefold eclipsed site (T4) leads to the formation of a typical covalent bond. Moreover, both sites have a similar interaction energy if electronic correlation effects are included. While the conclusions regarding the nature of the chemisorption bond in the two sites do not depend either on the cluster-model size, the kind of embedding hydrogen atoms used, or the quality of the wave function (Hartree-Fock or configuration interaction), the chemisorption energy depends strongly on the wave function used. In fact, inclusion of correlation energy is necessary to properly describe the interaction energies.

Matèries (anglès)

Citació

Citació

ILLAS I RIERA, Francesc, et al. Evidence for two different bonding mechanisms of Al on Si(111). Physical Review B. 1993. Vol. 47, num. 4, pags. 2417-2419. ISSN 0163-1829. [consulted: 4 of August of 2026]. Available at: https://hdl.handle.net/2445/9846

Exportar metadades

JSON - METS

Compartir registre