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2006

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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/13171

Electric-field control of exchange bias in multiferroic epitaxial heterostructures

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http://dx.doi.org/10.1103/PhysRevLett.97.227201

Abstract

The magnetic exchange between epitaxial thin films of the multiferroic (antiferromagnetic and ferroelectric) hexagonal YMnO3 oxide and a soft ferromagnetic (FM) layer is used to couple the magnetic response of the FM layer to the magnetic state of the antiferromagnetic one. We will show that biasing the ferroelectric YMnO3 layer by an electric field allows control of the magnetic exchange bias and subsequently the magnetotransport properties of the FM layer. This finding may contribute to paving the way towards a new generation of electric-field controlled spintronic devices.

Subject

Electrònica quàntica, Semiconductors, Microelectrònica

Subject (English)

Qunatum electronics, Semiconductors, Microelectronics

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Articles publicats en revistes (Física Aplicada)

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LAUKHIN, Vladimir, et al. Electric-field control of exchange bias in multiferroic epitaxial heterostructures. Physical Review Letters. 2006. Vol. 97, num. 22, pags. 227201-1-227201-4. ISSN 0031-9007. [consulted: 8 of August of 2026]. Available at: https://hdl.handle.net/2445/13171

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