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2011

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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/50485

Resistance Switching in Transparent Magnetic MgO Films

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Abstract

We have studied the abrupt and hysteretic changes of resistance in MgO-based capacitor devices. The switching behavior is discussed in terms of the formation and rupture of conduction filaments due to the migration of structural defects in the electric field, together with the redox events which affects the mobile carriers. The results presented in this paper suggest that MgO transparent films combining ferromagnetism and multilevel switching characteristics might pave the way for a new method for spintronic multibit data storage.

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http://dx.doi.org/10.1016/j.ssc.2011.10.009

Subject

Òxid de magnesi, Pel·lícules fines, Espintrònica, Ferromagnetisme, Matèria condensada

Subject (English)

Magnesium oxide, Thin films, Spintronics, Ferromagnetism, Condensed matter

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JAMBOIS, Olivier, et al. Resistance Switching in Transparent Magnetic MgO Films. Solid State Communications. 2011. Vol. 151, num. 24, pags. 1856-1859. ISSN 0038-1098. [consulted: 9 of October of 2026]. Available at: https://hdl.handle.net/2445/50485

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