Carregant...
Fitxers
Tipus de document
ArticleVersió
Versió acceptadaData de publicació
Tots els drets reservats
Si us plau utilitzeu sempre aquest identificador per citar o enllaçar aquest document: https://hdl.handle.net/2445/163665
A molecular dynamics simulation of hydrogen atoms collisions on an H-preadsorbed silica surface
Títol de la revista
Director/Tutor
ISSN de la revista
Títol del volum
Recurs relacionat
Resum
The interaction of hydrogen atoms and molecules with a silica surface is relevant for many research and technological areas. Here, the dynamics of hydrogen atoms colliding with an H-preadsorbed -cristobalite (001) surface has been studied using a semiclassical collisional method in conjunction with a recently developed analytical potential energy surface based on Density Functional Theory (DFT) calculations. The atomic recombination probability via an Eley-Rideal (E-R) mechanism as well as the probabilities for other competitive molecular surface processes have been determined in a broad range of collision energies (0.04-3.0) eV eV) for off-normal (v=45°) and normal (v=0°) incidence and for two different surface temperatures (TS = 300 and 1000 K). H2,gas molecules form in roto-vibrational excited levels while the energy transferred to the solid surface is below of 10% for all simulated conditions. Finally, the global atomic recombination coefficient (E-R) and vibrational state resolved recombination coefficients (v) were calculated and compared with the available experimental values. The calculated collisional data are of interest in chemical kinetics studies and fluid dynamics simulations of silica surface processes in H-based low-temperature, low-pressure plasmas.
Matèries
Matèries (anglès)
Citació
Citació
RUTIGLIANO, Maria, GAMALLO BELMONTE, Pablo, SAYÓS ORTEGA, Ramón, ORLANDINI, S., CACCIATORE, M.. A molecular dynamics simulation of hydrogen atoms collisions on an H-preadsorbed silica surface. _Plasma Sources Science & Technology_. 2014. Vol. 23, núm. 4, pàgs. 045016/1-045016/12. [consulta: 24 de gener de 2026]. ISSN: 0963-0252. [Disponible a: https://hdl.handle.net/2445/163665]