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Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation
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The electroluminescence (EL) at 1.54 µm of metal-oxide-semiconductor (MOS) devices with Er3+ ions embedded in the silicon-rich silicon oxide (SRSO) layer has been investigated under different polarization conditions and compared with that of erbium doped SiO2 layers. EL time-resolved measurements allowed us to distinguish between two different excitation mechanisms responsible for the Er3+ emission under an alternate pulsed voltage signal (APV). Energy transfer from silicon nanoclusters (Si-ncs) to Er3+ is clearly observed at low-field APV excitation. We demonstrate that sequential electron and hole injection at the edges of the pulses creates excited states in Si-ncs which upon recombination transfer their energy to Er3+ ions. On the contrary, direct impact excitation of Er3+ by hot injected carriers starts at the Fowler-Nordheim injection threshold (above 5 MV cm−1) and dominates for high-field APV excitation.
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RAMÍREZ RAMÍREZ, Joan Manel, et al. Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation. Nanotechnology. 2012. Vol. 23, num. 12, pags. 125203-125211. ISSN 0957-4484. [consulted: 28 of June of 2026]. Available at: https://hdl.handle.net/2445/128618