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Accepted version

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2012-03-13

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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/128618

Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation

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https://doi.org/10.1088/0957-4484/23/12/125203

Abstract

The electroluminescence (EL) at 1.54 µm of metal-oxide-semiconductor (MOS) devices with Er3+ ions embedded in the silicon-rich silicon oxide (SRSO) layer has been investigated under different polarization conditions and compared with that of erbium doped SiO2 layers. EL time-resolved measurements allowed us to distinguish between two different excitation mechanisms responsible for the Er3+ emission under an alternate pulsed voltage signal (APV). Energy transfer from silicon nanoclusters (Si-ncs) to Er3+ is clearly observed at low-field APV excitation. We demonstrate that sequential electron and hole injection at the edges of the pulses creates excited states in Si-ncs which upon recombination transfer their energy to Er3+ ions. On the contrary, direct impact excitation of Er3+ by hot injected carriers starts at the Fowler-Nordheim injection threshold (above 5 MV cm−1) and dominates for high-field APV excitation.

Subject

Metall-òxid-semiconductors, Compostos de silici, Transferència d'energia

Subject (English)

Metal oxide semiconductors, Silicon compounds, Energy transfer

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Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
Publicacions de projectes de recerca finançats per la UE

Citation

RAMÍREZ RAMÍREZ, Joan Manel, et al. Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation. Nanotechnology. 2012. Vol. 23, num. 12, pags. 125203-125211. ISSN 0957-4484. [consulted: 8 of August of 2026]. Available at: https://hdl.handle.net/2445/128618

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