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Si us plau utilitzeu sempre aquest identificador per citar o enllaçar aquest document: https://hdl.handle.net/2445/175416
Growth Study and Characterization of Single-Layer Graphene Structures Deposited on Copper Substrate by Chemical Vapour Deposition. [Capítol llibre]
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Currently, the graphene industry is moving forward to the import of graphene in a number
of novel applications. To take full advantage of the excellent properties of the material,
the standardization of the growth process is an emergency. The suitable growth
technique should ensure the high yield, accompanied by high quality of single-layer
graphene sheets. Chemical vapour deposition is the technology that fulfils the above
requirements, promoting the growth of largescale graphene films through automatized
processes. In the present chapter, we present the latest advances in this field, summarizing
the most recent publication activity of the authors. The results outline how the
control in the growth process over parameters like the gases flow, growth temperature
and pressure can affect the nucleation density of graphene domains, the growth rate and
percent coverage. Growth of graphene domains with different morphologies depends on
the crystallographic orientation of the copper lattice. At the same time, the formation of
ripples occurs in the graphene surface as a result of the copper foil compression during
the cooling step. These ripples are responsible for the appearance of a compressive stress
in the graphene sheets. We demonstrate the control over such stress through the variation
in the hydrogen flow during the growth.
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CHAITOGLOU, Stefanos, BERTRÁN SERRA, Enric, ANDÚJAR BELLA, José luis. Growth Study and Characterization of Single-Layer Graphene Structures Deposited on Copper Substrate by Chemical Vapour Deposition. [Capítol llibre]. _Chapter 5 in: Kyzas_. George; Mitropoulos. Vol. 2017, núm. IntechOpen. [consulta: 25 de febrer de 2026]. [Disponible a: https://hdl.handle.net/2445/175416]