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Article

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Accepted version

Publication date

2021-12-24

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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/218183

Insights into interface and bulk defects in a high efficiency kesterite-based device

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Related resource

https://doi.org/10.1039/D0EE02004D

Abstract

This work provides a detailed analysis of a high efficiency Cu2ZnSnSe4 device using a combination of advanced electron microscopy and spectroscopy techniques. In particular, a full picture of the different defects present at the interfaces of the device and in the bulk of the absorber is achieved through the combination of high resolution electron microscopy techniques with Raman, X-ray fluorescence and Auger spectroscopy measurements at the macro, micro and nano scales. The simultaneous investigation of the bulk and the interfaces allows assessing the impact of the defects found in each part of the device on its performance. Despite a good crystalline quality and homogeneous composition in the bulk, this work reports, for the first time, direct evidence of twinning defects in the bulk, of micro and nano-voids at the back interface and of grain-to-grain non-uniformities and dislocation defects at the front interface. These, together with other issues observed such as strong absorber thickness variations and a bilayer structure with small grains at the bottom, are shown to be the main factors limiting the performance of CZTSe devices. These results open the way to the identification of new solutions to further developing the kesterite technology and pushing it towards higher performances. Moreover, this study provides an example of how the advanced characterization of emergent multilayer-based devices can be employed to elucidate their main limitations.

Subject

Estructura cristal·lina (Sòlids), Sofre, Microscòpia electrònica

Subject (English)

Layer structure (Solids), Sulfur, Electron microscopy

Citation

Collections

Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
Articles publicats en revistes (Institut de Nanociència i Nanotecnologia (IN2UB))

Citation

FONOLL-RUBIO, R., et al. Insights into interface and bulk defects in a high efficiency kesterite-based device. Energy & Environmental Science. 2021. Vol. 14, num. 507-523. ISSN 1754-5692. [consulted: 11 of August of 2026]. Available at: https://hdl.handle.net/2445/218183

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