Carregant...
Fitxers
Tipus de document
ArticleVersió
Versió acceptadaData de publicació
Tots els drets reservats
Si us plau utilitzeu sempre aquest identificador per citar o enllaçar aquest document: https://hdl.handle.net/2445/47155
Amorphous silicon thin film solar cells deposited entirely by Hot-Wire Chemical Vapour Deposition at low temperature (<150 ºC)
Títol de la revista
Director/Tutor
ISSN de la revista
Títol del volum
Recurs relacionat
Resum
Amorphous silicon n-i-p solar cells have been fabricated entirely by Hot-Wire Chemical Vapour Deposition (HW-CVD) at low process temperature < 150 °C. A textured-Ag/ZnO back reflector deposited on Corning 1737F by rf magnetron sputtering was used as the substrate. Doped layers with very good conductivity and a very less defective intrinsic a-Si:H layer were used for the cell fabrication. A double n-layer (μc-Si:H/a-Si:H) and μc-Si:H p-layer were used for the cell. In this paper, we report the characterization of these layers and the integration of these layers in a solar cell fabricated at low temperature. An initial efficiency of 4.62% has been achieved for the n-i-p cell deposited at temperatures below 150 °C over glass/Ag/ZnO textured back reflector.
Matèries (anglès)
Citació
Col·leccions
Citació
VILLAR, Fernando, ANTONY, Aldrin, ESCARRÉ I PALOU, Jordi, IBARZ, D., ROLDÁN MOLINERO, Rubén, STELLA, Marco, MUÑOZ RAMOS, David, ASENSI LÓPEZ, José miguel, BERTOMEU I BALAGUERÓ, Joan. Amorphous silicon thin film solar cells deposited entirely by Hot-Wire Chemical Vapour Deposition at low temperature (<150 ºC). _Thin Solid Films_. 2009. Vol. 517, núm. 12, pàgs. 3575-3577. [consulta: 24 de gener de 2026]. ISSN: 0040-6090. [Disponible a: https://hdl.handle.net/2445/47155]