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2010

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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/28810

Structural and optical properties of dilute InAsN grown by molecular beam epitaxy

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http://dx.doi.org/10.1063/1.3509149

Abstract

We perform a structural and optical characterization of InAs1¿xNx epilayers grown by molecular beam epitaxy on InAs substrates x 2.2% . High-resolution x-ray diffraction HRXRD is used to obtain information about the crystal quality and the strain state of the samples and to determine the N content of the films. The composition of two of the samples investigated is also obtained with time-of-flight secondary ion mass spectroscopy ToF-SIMS measurements. The combined analysis of the HRXRD and ToF-SIMS data suggests that the lattice parameter of InAsN might significantly deviate from Vegard"s law. Raman scattering and far-infrared reflectivity measurements have been carried out to investigate the incorporation of N into the InAsN alloy. N-related local vibrational modes are detected in the samples with higher N content. The origin of the observed features is discussed. We study the compositional dependence of the room-temperature band gap energy of the InAsN alloy. For this purpose, photoluminescence and optical absorption measurements are presented. The results are analyzed in terms of the band-anticrossing BAC model. We find that the room-temperature coupling parameter for InAsN within the BAC model is CNM=2.0 0.1 eV.

Subject

Propietats òptiques, Pel·lícules fines, Difracció de raigs X, Semiconductors, Cristal·lografia

Subject (English)

Optical properties, Thin films, X-rays diffraction, Semiconductors, Crystallography

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Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

Citation

IBÁÑEZ I INSA, Jordi, et al. Structural and optical properties of dilute InAsN grown by molecular beam epitaxy. Journal of Applied Physics. 2010. Vol. 108, num. 1, pags. 103504-1-103504-8. ISSN 0021-8979. [consulted: 10 of August of 2026]. Available at: https://hdl.handle.net/2445/28810

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