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Structural and optical properties of dilute InAsN grown by molecular beam epitaxy
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We perform a structural and optical characterization of InAs1¿xNx epilayers grown by molecular beam epitaxy on InAs substrates x 2.2% . High-resolution x-ray diffraction HRXRD is used to obtain information about the crystal quality and the strain state of the samples and to determine the N content of the films. The composition of two of the samples investigated is also obtained with time-of-flight secondary ion mass spectroscopy ToF-SIMS measurements. The combined analysis of the HRXRD and ToF-SIMS data suggests that the lattice parameter of InAsN might significantly deviate from Vegard"s law. Raman scattering and far-infrared reflectivity measurements have been carried out to investigate the incorporation of N into the InAsN alloy. N-related local vibrational modes are detected in the samples with higher N content. The origin of the observed features is discussed. We study the compositional dependence of the room-temperature band gap energy of the InAsN alloy. For this purpose, photoluminescence and optical absorption measurements are presented. The results are analyzed in terms of the band-anticrossing BAC model. We find that the room-temperature coupling parameter for InAsN within the BAC model is CNM=2.0 0.1 eV.
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IBÁÑEZ I INSA, Jordi, OLIVA VIDAL, Robert, MARE, M. de la, SCHMIDBAUER, M., HERNÁNDEZ MÁRQUEZ, Sergi, PELLEGRINO, Paolo, SCURR, D. j., CUSCÓ I CORNET, Ramon, ARTÚS I SURROCA, Lluís, SHAFI, M., MARI, R. h., HENINI, M., ZHUANG, Q., GODENIR, A., KRIER, A.. Structural and optical properties of dilute InAsN grown by molecular beam epitaxy. _Journal of Applied Physics_. 2010. Vol. 108, núm. 1, pàgs. 103504-1-103504-8. [consulta: 14 de febrer de 2026]. ISSN: 0021-8979. [Disponible a: https://hdl.handle.net/2445/28810]