Fitxers
Tipus de document
ArticleVersió
Versió publicadaData de publicació
Tots els drets reservats
Si us plau utilitzeu sempre aquest identificador per citar o enllaçar aquest document: https://hdl.handle.net/2445/159771
Hysteretic control of organic conductance due to remanent magnetic fringe fields
Títol de la revista
Director/Tutor
ISSN de la revista
Títol del volum
Recurs relacionat
Resum
Manipulation of the remanent (zero external magnetic field) magnetization state of a single ferromagnetic film is shown to control the room-temperature conductance of an organic semiconductor thin film deposited on top. For the organic semiconductor Alq3, the magnetic fringe fields from a multidomain remanent magnetization state of the film enhance the device conductance by several percent relative to its value for the magnetically saturated ferromagnetic film. The effect of fringe fields is insensitive to ferromagnetic film's thickness (which varies the fringe field magnitude proportionately) but sensitive to the magnetic domain's correlation length.
Matèries (anglès)
Citació
Citació
MACIÀ BROS, Ferran, et al. Hysteretic control of organic conductance due to remanent magnetic fringe fields. Applied Physics Letters. 2013. Vol. 102, num. 042408. ISSN 0003-6951. [consulted: 8 of August of 2026]. Available at: https://hdl.handle.net/2445/159771