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2008

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Si us plau utilitzeu sempre aquest identificador per citar o enllaçar aquest document: https://hdl.handle.net/2445/17583

Auger quenching-based modulation of electroluminescence from ion-implanted silicon nanocrystals

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Recurs relacionat

http://dx.doi.org/10.1088/0957-4484/19/20/205201

Resum

We describe high-speed control of light from silicon nanocrystals under electrical excitation. The nanocrystals are fabricated by the ion implantation of Si+ in the 15?nm thick gate oxide of a field effect transistor at 6.5?keV. A characteristic read-peaked electroluminescence is obtained either by DC or AC gate excitation. However, AC gate excitation is found to have a frequency response that is limited by the radiative lifetimes of silicon nanocrystals, which makes impossible the direct modulation of light beyond 100?kb?s?1 rates. As a solution, we demonstrate that combined DC gate excitation along with an AC channel hot electron injection of electrons into the nanocrystals may be used to obtain a 100% deep modulation at rates of 200?Mb?s?1 and low modulating voltages. This approach may find applications in biological sensing integrated into CMOS, single-photon emitters or direct encoding of information into light from Si-nc doped with erbium systems, which exhibit net optical gain. In this respect, the main advantage compared to conventional electro-optical modulators based on plasma dispersion effects is the low power consumption (104 times smaller) and thus the inherent large scale of integration. A detailed electrical characterization is also given. An Si/SiO2 barrier change from ?b = 3.2 to 4.2?eV is found while the injection mechanism is changed from Fowler?Nordheim to channel hot electron, which is a clear signature of nanocrystal charging and subsequent electroluminescence quenching.

Matèries

Electrònica, Matèria condensada, Nanocristalls semiconductors

Matèries (anglès)

Electronics, Condensed matter, Semiconductor nanocrystals

Citació

Col·leccions

Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
Publicacions de projectes de recerca finançats per la UE

Citació

CARRERAS, Josep, et al. Auger quenching-based modulation of electroluminescence from ion-implanted silicon nanocrystals. Nanotechnology. 2008. Vol. 19, num. 20, pags. 205201-1-205201-9. ISSN 0957-4484. [consulted: 19 of August of 2026]. Available at: https://hdl.handle.net/2445/17583

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