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2002

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Si us plau utilitzeu sempre aquest identificador per citar o enllaçar aquest document: https://hdl.handle.net/2445/47292

Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by Hot-Wire CVD

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http://dx.doi.org/10.1016/S0022-3093(01)01015-8

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Hydrogenated nanocrystalline silicon (nc-Si:H) obtained by hot-wire chemical vapour deposition (HWCVD) at low substrate temperature (150 °C) has been incorporated as the active layer in bottom-gate thin-film transistors (TFTs). These devices were electrically characterised by measuring in vacuum the output and transfer characteristics for different temperatures. The field-effect mobility showed a thermally activated behaviour which could be attributed to carrier trapping at the band tails, as in hydrogenated amorphous silicon (a-Si:H), and potential barriers for the electronic transport. Trapped charge at the interfaces of the columns, which are typical in nc-Si:H, would account for these barriers. By using the Levinson technique, the quality of the material at the column boundaries could be studied. Finally, these results were interpreted according to the particular microstructure of nc-Si:H.

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Deposició química en fase vapor, Transistors, Pel·lícules fines, Nanocristalls, Silici

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Chemical vapor deposition, Transistors, Thin films, Nanocrystals, Silicon

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PUIGDOLLERS I GONZÁLEZ, Joaquim, VOZ SÁNCHEZ, Cristóbal, ORPELLA, Albert, MARTIN GARCIA, Isidro, SOLER VILAMITJANA, David, FONRODONA TURON, Marta, BERTOMEU I BALAGUERÓ, Joan, ANDREU I BATALLÉ, Jordi, ALCUBILLA GONZÁLEZ, Ramón. Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by Hot-Wire CVD. _Journal of non-Crystalline Solids_. 2002. Vol. 299/302, núm. 1, pàgs. 400-404. [consulta: 9 de gener de 2026]. ISSN: 0022-3093. [Disponible a: https://hdl.handle.net/2445/47292]

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