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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/24802

SrRuO3/SrTiO3/SrRuO3 heterostructures for magnetic tunnel junctions

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We report on the growth and characterization of SrRuO3 single layers and SrRuO3/SrTiO3/SrRuO3 heterostructures grown on SrTiO3(100) substrates. The thickness dependence of the coercivity was determined for these single layers. Heterostructures with barrier thickness tb=1, 2.5, and 4 nm were fabricated, with electrodes having thickness ranging from 10 to 100 nm. The hysteresis loops of heterostructures with tb=2.5¿nm, 4 nm reveal uncoupled magnetic switching of the electrodes. Therefore, these heterostructures can be used for the fabrication of magnetic tunneling junctions.

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HERRANZ CASABONA, Gervasi, et al. SrRuO3/SrTiO3/SrRuO3 heterostructures for magnetic tunnel junctions. Journal of Applied Physics. 2003. Vol. 93, num. 8035-8037. ISSN 0021-8979. [consulted: 12 of June of 2026]. Available at: https://hdl.handle.net/2445/24802

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