Dijous 11 de juny, el Dipòsit Digital no estarà operatiu de 15:00 a 17:00 h per tasques de manteniment. Disculpeu les molèsties.
El jueves 11 de Junio, el Dipòsit Digital no estará operativo de 15:00 a 17:00 h debido a tareas de mantenimiento. Disculpen las molestias.
Thursday, Jun 11th, the Digital Repository will be unavailable due to a system update.

Files

505960.pdf (121.03 KB)

Document type

Article

Version

Published version

Publication date

2003-05-15

All rights reserved

Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/24802

SrRuO3/SrTiO3/SrRuO3 heterostructures for magnetic tunnel junctions

Journal Title

Authors

Director/Tutor

Journal ISSN

Volume Title

Related resource

http://dx.doi.org/10.1063/1.1555372

Abstract

We report on the growth and characterization of SrRuO3 single layers and SrRuO3/SrTiO3/SrRuO3 heterostructures grown on SrTiO3(100) substrates. The thickness dependence of the coercivity was determined for these single layers. Heterostructures with barrier thickness tb=1, 2.5, and 4 nm were fabricated, with electrodes having thickness ranging from 10 to 100 nm. The hysteresis loops of heterostructures with tb=2.5¿nm, 4 nm reveal uncoupled magnetic switching of the electrodes. Therefore, these heterostructures can be used for the fabrication of magnetic tunneling junctions.

Subject

Histèresi, Magnetisme, Elèctrodes

Subject (English)

Hysteresis, Magnetism, Electrodes

Citation

Collections

Articles publicats en revistes (Física Aplicada)

Citation

HERRANZ CASABONA, Gervasi, et al. SrRuO3/SrTiO3/SrRuO3 heterostructures for magnetic tunnel junctions. Journal of Applied Physics. 2003. Vol. 93, num. 8035-8037. ISSN 0021-8979. [consulted: 12 of June of 2026]. Available at: https://hdl.handle.net/2445/24802

Export metadata

JSON - METS

Share record