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Chemisorption of group-III metals on the Si(111) and Ge(111) surfaces: An ab initio study

dc.contributor.authorRicart, Josep M.cat
dc.contributor.authorRubio Martínez, Jaimecat
dc.contributor.authorIllas i Riera, Francesccat
dc.date.accessioned2009-10-22T10:23:48Z
dc.date.available2009-10-22T10:23:48Z
dc.date.issued1990cat
dc.description.abstractChemisorption of group-III metal adatoms on Si(111) and Ge(111) has been studied through the ab initio Hartree-Fock method including nonempirical pseudopotentials and using cluster models to simulate the surface. Three different high-symmetry sites (atop, eclipsed, and open) have been considered by using X4H9, X4H7, and X6H9 (X=Si,Ge) cluster models. In a first step, ideal surface geometries have been used. Metal-induced reconstruction upon chemisorption has also been taken into account. Equilibrium distances, binding energies, and vibrational frequencies have been obtained and compared with available experimental data. From binding-energy considerations, the atop and eclipsed sites seem to be the most favorable ones and thus a coadsorption picture may be suggested. Group-III metals exhibit a similar behavior and the same is true for Si(111) and Ge(111) surfaces when chemisorption is considered.eng
dc.format.extent9 p.cat
dc.format.mimetypeapplication/pdfeng
dc.identifier.idgrec60499cat
dc.identifier.issn0163-1829cat
dc.identifier.urihttps://hdl.handle.net/2445/9771
dc.language.isoengeng
dc.publisherThe American Physical Societyeng
dc.relation.isformatofReproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.42.5212cat
dc.relation.ispartofPhysical Review B, 1990, vol. 42, núm. 8, p. 5212-5220.eng
dc.relation.urihttp://dx.doi.org/10.1103/PhysRevB.42.5212
dc.rights(c) The American Physical Society, 1990
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.sourceArticles publicats en revistes (Ciència dels Materials i Química Física)
dc.subject.classificationQuímica de superfíciescat
dc.subject.classificationAbsorciócat
dc.subject.classificationSòlidscat
dc.subject.classificationSemiconductorscat
dc.subject.classificationTeoria de l'aproximaciócat
dc.subject.otherSurface chemistryeng
dc.subject.otherAbsorption
dc.subject.otherSolids
dc.subject.otherSemiconductorseng
dc.subject.otherApproximation theoryeng
dc.titleChemisorption of group-III metals on the Si(111) and Ge(111) surfaces: An ab initio studyeng
dc.typeinfo:eu-repo/semantics/articleeng
dc.typeinfo:eu-repo/semantics/publishedVersion

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