Modeling of TLM measures in heterojunction solar cells

Abstract

This work uses a simulation based on the program LTspice with data provided by a Fortran based program in order to evaluate the contact resistivity of a layer of MoOx on top of a sample of n-Si to examine their properties when used in heterojunction solar cells. This is done following a model that uses sheet resistivity and the finite element method to generate a resistor network representing those elements that imitates the TLM technique in the microscopical order. We will use the simulation in order to measure the resistance of our system for different distances between electrodes and thicknesses of the MoOx layer to evaluate the influence of that thickness in the contact resistivity and other properties