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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/46883
Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices
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High optical power density of 0.5 mW/cm2, external quantum efficiency of 0.1%, and population inversion of 7% are reported from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices. Electrical and electroluminescence mechanisms in these devices were investigated. The excitation cross section for the 543 nm Tb3+ emission was estimated under electrical pumping, resulting in a value of 8.2 × 10−14 cm2, which is one order of magnitude larger than one reported for Tb3+:SiO2 light emitting devices. These results demonstrate the potentiality of Tb+-implanted silicon nitride material for the development of integrated light sources compatible with Si technology.
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BERENCÉN RAMÍREZ, Yonder Antonio, et al. Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices. Applied Physics Letters. 2013. Vol. 103, num. 11, pags. 111102-1-111102-4. ISSN 0003-6951. [consulted: 19 of August of 2026]. Available at: https://hdl.handle.net/2445/46883