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2014-02-15

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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/48334

Domain matched epitaxial growth of Bi1.5Zn1Nb1.5O7 thin films by pulsed laser deposition

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http://dx.doi.org/10.1016/j.jallcom.2013.10.025

Abstract

Bi1.5Zn1Nb1.5O7 (BZN) epitaxial thin films were grown by pulsed laser deposition on Al2O3 with a double ZnO buffer layer through domain matching epitaxy (DME) mechanism. The pole figure analysis and reciprocal space mapping revealed the single crystalline nature of the thin film. The pole figure analysis also shows a 60º twinning for the (222) oriented crystals. Sharp intense spots in the SAED pattern also indicate the high crystalline nature of BZN thin film. The Fourier filtered HRTEM images of the BZN-ZnO interface confirms the domain matched epitaxy of BZN with ZnO buffer. An electric field dependent dielectric tunability of 68% was obtained for the BZN thin films with inter digital capacitors patterned over the film.

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Pel·lícules fines, Microelectrònica, Làsers, Semiconductors, Microscòpia electrònica de transmissió, Optoelectrònica, Difracció de raigs X, Metalls, Ceràmiques electròniques

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Thin films, Microelectronics, Lasers, Semiconductors, Transmission electron microscopy, Optoelectronics, X-rays diffraction, Metals, Electronic ceramics

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KRISHNAPRASAD, P. S., et al. Domain matched epitaxial growth of Bi1.5Zn1Nb1.5O7 thin films by pulsed laser deposition. Journal of Alloys and Compounds. 2014. Vol. 586, num. 524-528. ISSN 0925-8388. [consulted: 14 of August of 2026]. Available at: https://hdl.handle.net/2445/48334

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