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Treball de fi de grau

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cc-by-nc-nd (c) Carranza, 2023
Si us plau utilitzeu sempre aquest identificador per citar o enllaçar aquest document: https://hdl.handle.net/2445/194066

Morphology and optical characterization of semiconducting nanostructures

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Semiconductor nanostructures have an enormous potential for applications in diverse areas of modern technologies due to their versatility and possibility of tuning their properties as desired. In this work, the optoelectronic properties of Bi2S3 and Bi2S3-Au nanostructures were correlated with their morphology and hybridization features for samples with different shapes, sizes and Au inclusion. The aim was to find the optimal values of these parameters for enhancing their optical response. This was carried out by characterizing morphologically and optically those nanostructures with TEM imaging, UV-Vis and PL spectroscopies. The results showed that the optical properties depend strictly on the width-to-length ratio and that Au presence enhances light absorption in the infrared range. It was found that the gap energy values of the nanostructures were larger than that of bulk Bi2S3.

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Treballs Finals de Grau de Física, Facultat de Física, Universitat de Barcelona, Curs: 2022-2023, Tutora: Adriana I. Figueroa

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CARRANZA BOTEY, Ester. Morphology and optical characterization of semiconducting nanostructures. [consulta: 23 de gener de 2026]. [Disponible a: https://hdl.handle.net/2445/194066]

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