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2012-08-14

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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/32275

Correlation between charge transport and electroluminescence properties of Si-rich oxide/nitride/oxide-based light emitting capacitors.

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http://dx.doi.org/10.1063/1.4742054

Abstract

The electrical and electroluminescence (EL) properties at room and high temperatures of oxide/ nitride/oxide (ONO)-based light emitting capacitors are studied. The ONO multidielectric layer is enriched with silicon by means of ion implantation. The exceeding silicon distribution follows a Gaussian profile with a maximum of 19%, centered close to the lower oxide/nitride interface. The electrical measurements performed at room and high temperatures allowed to unambiguously identify variable range hopping (VRH) as the dominant electrical conduction mechanism at low voltages, whereas at moderate and high voltages, a hybrid conduction formed by means of variable range hopping and space charge-limited current enhanced by Poole-Frenkel effect predominates. The EL spectra at different temperatures are also recorded, and the correlation between charge transport mechanisms and EL properties is discussed.

Subject

Electrònica, Fotònica, Metall-òxid-semiconductors complementaris, Propietats elèctriques

Subject (English)

Electronics, Photonics, Complementary metal oxide semiconductors, Electric properties

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Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

Citation

BERENCÉN RAMÍREZ, Yonder Antonio, et al. Correlation between charge transport and electroluminescence properties of Si-rich oxide/nitride/oxide-based light emitting capacitors. Journal of Applied Physics. 2012. Vol. 112, num. 3, pags. 033114-1-033114-5. ISSN 0021-8979. [consulted: 15 of August of 2026]. Available at: https://hdl.handle.net/2445/32275

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