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1999

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Si us plau utilitzeu sempre aquest identificador per citar o enllaçar aquest document: https://hdl.handle.net/2445/10640

Magnetoresistance at artificial interfaces in the itinerant SrRuO3 ferromagnet

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Recurs relacionat

http://dx.doi.org/10.1103/PhysRevB.60.9579

Resum

The magnetoresistance across interfaces in the itinerant ferromagnetic oxide SrRuO3 have been studied. To define appropriately the interfaces, epitaxial thin films have been grown on bicrystalline and laser-patterned SrTiO3 substrates. Comparison is made with results obtained on similar experiments using the double-exchange ferromagnetic oxide La2/3Sr1/3MnO3. It is found that in SrRuO3, interfaces induce a substantial negative magnetoresistance, although no traces of the low-field spin tunneling magnetoresistance are found. We discuss these results on the basis of the distinct degree of spin polarization in ruthenates and manganites and the different nature of the surface magnetic layer formed at interfaces.

Matèries

Materials, Propietats magnètiques

Matèries (anglès)

Magnetic properties and materials, Electronic transport in condensed matter, Electronic structure and electrical properties of surfaces

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Articles publicats en revistes (Física Aplicada)

Citació

BIBES, Manuel, et al. Magnetoresistance at artificial interfaces in the itinerant SrRuO3 ferromagnet. Physical Review B. 1999. Vol. 60, num. 13, pags. 9579-9582. ISSN 0163-1829. [consulted: 29 of June of 2026]. Available at: https://hdl.handle.net/2445/10640

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