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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/188715
Effect of Si3N4-mediated inversion layer on the electroluminescence properties of silicon nanocrystal superlattices
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The achievement of an efficient all-Si electrically-pumped light emitter is a major milestone in present optoelectronics still to be fulfilled. Silicon nanocrystals (Si NCs) are an attractive material which, by means of the quantum confinement effect, allow attaining engineered bandgap visible emission from Si by controlling the NC size. In this work, SiO2-embedded Si NCs are employed as an active layer within a light-emitting device structure. It is demonstrated that the use of an additional thin Si3N4 interlayer within the metal-insulator-semiconductor device design induces an enhanced minority carrier injection from the substrate, which in turn increases the efficiency of sequential carrier injection under pulsed electrical excitation. This results in a substantial increase in the electroluminescence efficiency of the device. Here, the effect of this Si3N4 interlayer on the structural, optical, electrical, and electro-optical properties of a Si NC-based light emitter is reported, and the physics underlying these results is discussed.
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LÓPEZ VIDRIER, Julià, et al. Effect of Si3N4-mediated inversion layer on the electroluminescence properties of silicon nanocrystal superlattices. Advanced Electronic Materials. 2018. Vol. 4, num. 5, pags. 1700666. ISSN 2199-160X. [consulted: 14 of October of 2026]. Available at: https://hdl.handle.net/2445/188715