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Rare earth- and Si nanostructure-based light emitting devices for integrated photonics
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[spa] Esta tesis presenta un trabajo experimental en el desarrollo de iones de tierras raras y nanoestructuras de Si como plataforma de materiales para dispositivos de emisión de luz (LEDs) en el rango visible e infrarrojo cercano. Se han fabricado diferentes dispositivos electroluminiscentes basados en capas simples, dobles o triples de óxido de silicio y/o nitruro de silicio dopados o no con tierras raras. Para ello se han empleado varias técnicas de fabricación compatibles con la tecnología CMOS; a saber, depósito de vapor químico asistido por plasma (PECVD), pulverización catódica mediante magnetrón, depósito de vapor químico a baja presión (LPCVD) e implantación de iones. Así mismo, las propiedades estructurales y de composición de las capas fabricadas han sido determinadas mediante el uso de técnicas de caracterización tales como TOF-SIMS, SIMS, XPS, EFTEM, FIB y elipsometría. Además, a temperatura ambiente y altas temperaturas (25 0C – 300 0C) se han estudiado las propiedades electro-ópticas en los regímenes cuasi-estático y dinámico. Por lo general, las técnicas electro-ópticas empleadas fueron corriente-voltaje, capacitancia-voltaje, estudio de carga hasta la ruptura, electroluminiscencia (EL)-corriente, EL-voltaje y EL resuelta en tiempo.
[eng] This thesis presents experimental work on developing rare-earth ions and Si nanostructures as a material platform for light emitting devices (LEDs) in the visible and near-infrared range. The realization of the different electroluminescent devices, based on a single, bi- or tri-layer approach of silicon oxide and/or silicon nitride co-doped or not with rare earth ions, is successfully performed. Several complementary metal-oxide-semiconductor (CMOS) compatible fabrication techniques such as co-magnetron sputtering, plasma-enhanced chemical vapor deposition (PECVD), low-pressure chemical vapor deposition (LPCVD) and ion implantation are used. By using characterization techniques such as time of flight secondary ion mass spectrometry (TOF-SIMS), secondary ion mass spectrometry (SIMS), X-ray photoelectron spectroscopy (XPS), energy-filtered transmission electron microscopy (EFTEM), focused ion beam (FIB) and ellipsometry, the structural and compositional properties of the studied active layers are determined. In addition, electro-optical properties at room and at high temperatures (25 0C – 300 0C) under quasi-static and dynamic regimes are studied in both visible and near-infrared spectral region. Typically, the used electro-optical techniques have been current-voltage, capacitance-voltage, charge to breakdown, electroluminescence (EL)-current, EL-voltage and time-resolved EL.
[eng] This thesis presents experimental work on developing rare-earth ions and Si nanostructures as a material platform for light emitting devices (LEDs) in the visible and near-infrared range. The realization of the different electroluminescent devices, based on a single, bi- or tri-layer approach of silicon oxide and/or silicon nitride co-doped or not with rare earth ions, is successfully performed. Several complementary metal-oxide-semiconductor (CMOS) compatible fabrication techniques such as co-magnetron sputtering, plasma-enhanced chemical vapor deposition (PECVD), low-pressure chemical vapor deposition (LPCVD) and ion implantation are used. By using characterization techniques such as time of flight secondary ion mass spectrometry (TOF-SIMS), secondary ion mass spectrometry (SIMS), X-ray photoelectron spectroscopy (XPS), energy-filtered transmission electron microscopy (EFTEM), focused ion beam (FIB) and ellipsometry, the structural and compositional properties of the studied active layers are determined. In addition, electro-optical properties at room and at high temperatures (25 0C – 300 0C) under quasi-static and dynamic regimes are studied in both visible and near-infrared spectral region. Typically, the used electro-optical techniques have been current-voltage, capacitance-voltage, charge to breakdown, electroluminescence (EL)-current, EL-voltage and time-resolved EL.
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BERENCÉN RAMÍREZ, Yonder Antonio. Rare earth- and Si nanostructure-based light emitting devices for integrated photonics. [consulted: 27 of August of 2026]. Available at: https://hdl.handle.net/2445/62291