Spectroscopic ellipsometry study of the In1-x Gax Asy P1-y / InP Heterojunctions grown by metalorganic chemical-vapor deposition

Vista senzilla d'ítem
dc.contributor.authorDrévillon, B.
dc.contributor.authorBertrán Serra, Enric
dc.contributor.authorAlnot, P.
dc.contributor.authorOlivier, J.
dc.contributor.authorRazeghi, M.
dc.date.accessioned2012-10-09T08:43:25Z
dc.date.available2012-10-09T08:43:25Z
dc.date.issued1986
dc.date.updated2012-10-09T08:43:25Z
dc.description.abstractThe dielectric functions of InP, In0.53Ga0.47As, and In0.75Ga0.25As0.5P0.5 epitaxial layers have been measured using a polarization modulation spectroscopic ellipsometer in the 1.5 to 5.3 eV region. The oxide removal procedure has been carefully checked by comparing spectroscopic ellipsometry and x ray photoelectron spectroscopy measurements. These reference data have been used to investigate the structural nature of metalorganic chemical vapor deposition grown In0.53Ga0.47As/InP and In0.75Ga0.25As0.5P0.5/InP heterojunctions, currently used for photodiodes and laser diodes. The sharpness of the interfaces has been systematically compared for the two types of heterojunctions: In1 xGaxAsy/InP and InP/In1 xGaxAsyP1 y. The sharpest interface is obtained for InP growth on In0.75Ga0.25As0.5P0.5 where the interface region is estimated to be (10±10) Å thick. The importance of performing in situ SE measurements is emphasized.
dc.format.extent7 p.
dc.format.mimetypeapplication/pdf
dc.identifier.idgrec004363
dc.identifier.issn0021-8979
dc.identifier.urihttps://hdl.handle.net/2445/32230
dc.language.isoeng
dc.publisherAmerican Institute of Physics
dc.relation.isformatofReproducció del document publicat a: http://dx.doi.org/10.1063/1.337603
dc.relation.ispartofJournal of Applied Physics, 1986, vol. 60, num. 10, p. 3512-3518
dc.relation.urihttp://dx.doi.org/10.1063/1.337603
dc.rights(c) American Institute of Physics , 1986
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.sourceArticles publicats en revistes (Física Aplicada)
dc.subject.classificationPel·lícules fines
dc.subject.classificationEl·lipsometria
dc.subject.otherThin films
dc.subject.otherEllipsometry
dc.titleSpectroscopic ellipsometry study of the In1-x Gax Asy P1-y / InP Heterojunctions grown by metalorganic chemical-vapor deposition
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/publishedVersion

Fitxers

Paquet original

Mostrant 1 - 1 de 1
Miniatura
Nom:
004363.pdf
Mida:
493.76 KB
Format:
Adobe Portable Document Format
Descarregar

Col·leccions

Articles publicats en revistes (Física Aplicada)