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Energetics and carrier transport in doped Si/SiO2 quantum dots
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In the present theoretical work we have considered impurities, either boron or phosphorous, located at different substitutional sites in silicon quantum dots (Si-QDs) with diameters around 1.5 nm, embedded in a SiO2 matrix. Formation energy calculations reveal that the most energetically-favored doping sites are inside the QD and at the Si/SiO2 interface for P and B impurities, respectively. Furthermore, electron and hole transport calculations show in all the cases a strong reduction of the minimum voltage threshold, and a corresponding increase of the total current in the low-voltage regime. At higher voltage, our findings indicate a significant increase of transport only for P-doped Si-QDs, while the electrical response of B-doped ones does not stray from the undoped case. These findings are of support for the employment of doped Si-QDs in a wide range of applications, such as Si-based photonics or photovoltaic solar cells.
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GARCIA-CASTELLO, Nuria, ILLERA ROBLES, Sergio, PRADES GARCÍA, Juan daniel, OSSICINI, Stefano, CIRERA HERNÁNDEZ, Albert, GUERRA, Roberto. Energetics and carrier transport in doped Si/SiO2 quantum dots. _Nanoscale_. 2015. Vol. 7, núm. 29, pàgs. 12564-12571. [consulta: 31 de gener de 2026]. ISSN: 2040-3364. [Disponible a: https://hdl.handle.net/2445/103227]