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2002

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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/47605

Studies on grain boundaries in nanocrystalline silicon grown by Hot-Wire CVD

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http://dx.doi.org/10.1016/S0022-3093(01)00943-7

Abstract

The use of a tantalum wire in hot-wire chemical vapour deposition (HWCVD) has allowed the deposition of dense nanocrystalline silicon at low filament temperatures (1550 °C). A transition in the crystalline preferential orientation from (2 2 0) to (1 1 1) was observed around 1700 °C. Transmission electron microscopy (TEM) images, together with secondary ion mass spectrometry (SIMS) measurements, suggested that no oxidation occurred in materials obtained at low filament temperature due to the high density of the tissue surrounding grain boundaries. A greater concentration of SiH 3 radicals formed at these temperatures seemed to be responsible for the higher density.

Subject

Silici, Nanocristalls, Deposició química en fase vapor, Oxigen, Pel·lícules fines, Cèl·lules solars

Subject (English)

Silicon, Nanocrystals, Chemical vapor deposition, Oxygen, Thin films, Solar cells

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Articles publicats en revistes (Física Aplicada)

Citation

FONRODONA TURON, Marta, et al. Studies on grain boundaries in nanocrystalline silicon grown by Hot-Wire CVD. Journal of non-Crystalline Solids. 2002. Vol. 299-302, num. 1, pags. 14-19. ISSN 0022-3093. [consulted: 8 of August of 2026]. Available at: https://hdl.handle.net/2445/47605

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