Document type
ArticleVersion
Submitted versionPublication date
All rights reserved
Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/47124
Influence of RF power on the properties of sputtered ZnO:Al thin films
Journal Title
Director/Tutor
Journal ISSN
Volume Title
Related resource
Abstract
Transparent conducting, aluminium doped zinc oxide thin films (ZnO:Al) were deposited by radio frequency (RF) magnetron sputtering. The RF power was varied from 60 to 350Wwhereas the substrate temperature was kept at 160 °C. The structural, electrical and optical properties of the as-deposited films were found to be influenced by the deposition power. The X-ray diffraction analysis showed that all the films have a strong preferred orientation along the [001] direction. The crystallite size was varied from 14 to 36 nm, however no significant change was observed in the case of lattice constant. The optical band gap varied in the range 3.44-3.58 eV. The lowest resistivity of 1.2×10 -3Vcm was shown by the films deposited at 250 W. The mobility of the films was found to increase with the deposition power.
Subject (English)
Citation
Citation
ANTONY, Aldrin, et al. Influence of RF power on the properties of sputtered ZnO:Al thin films. physica status solidi (a). 2010. Vol. 207, num. 7, pags. 1577-1580. ISSN 1862-6300. [consulted: 13 of June of 2026]. Available at: https://hdl.handle.net/2445/47124