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Article

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Accepted version

Publication date

1991

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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/98451

Hydrogen related effects in a-Si:H studied by photothermal deflection spectroscopy

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http://dx.doi.org/10.1016/0921-4526(91)90136-3

Abstract

A study of thermal annealing of a-Si:H samples between 300 and 600°C has been carried out. At increasing annealing temperatures, the sub-gap absorption measured by PDS increases showing two inflections, centered at 375 and 550°C. The hydrogen content measured by thermal desorption spectroscopy evolves in the same temperature range, whereas the evolution of the hydrogen content deduced from the IR transmission spectra differs, decreasing sooner and vanishing already at about 450°C.

Subject

Espectroscòpia, Silici, Física de l'estat sòlid, Semiconductors

Subject (English)

Spectrum analysis, Silicon, Solid state physics, Semiconductors

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Articles publicats en revistes (Física Aplicada)

Citation

SERRA-MIRALLES, J., et al. Hydrogen related effects in a-Si:H studied by photothermal deflection spectroscopy. Physica B. 1991. Vol. 170, num. 1-4, pags. 269-272. ISSN 0921-4526. [consulted: 15 of August of 2026]. Available at: https://hdl.handle.net/2445/98451

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