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Characterization of the electrical properties of individual tin-oxide nanowires contacted to platinum nanoelectrodes
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A simple and useful experimental alternative to field-effect transistors for measuring electrical properties
free electron concentration nd, electrical mobility , and conductivity in individual nanowires has been
developed. A combined model involving thermionic emission and tunneling through interface states is proposed
to describe the electrical conduction through the platinum-nanowire contacts, fabricated by focused ion
beam techniques. Current-voltage I-V plots of single nanowires measured in both two- and four-probe
configurations revealed high contact resistances and rectifying characteristics. The observed electrical behavior
was modeled using an equivalent circuit constituted by a resistance placed between two back-to-back Schottky
barriers, arising from the metal-semiconductor-metal M-S-M junctions. Temperature-dependent I-V measurements
revealed effective Schottky barrier heights up to BE= 0.4 eV.
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HERNÁNDEZ RAMÍREZ, Francisco, TARANCÓN RUBIO, Albert, CASALS GUILLÉN, Olga, PELLICER VILÀ, Eva m. (eva maria), RODRÍGUEZ, J., ROMANO RODRÍGUEZ, Albert, MORANTE I LLEONART, Joan ramon, BARTH, Sven, MATHUR, Sanjay. Characterization of the electrical properties of individual tin-oxide nanowires contacted to platinum nanoelectrodes. _Physical Review B_. 2007. Vol. 76, núm. 8, pàgs. 085429-1-085429-5. [consulta: 21 de gener de 2026]. ISSN: 0163-1829. [Disponible a: https://hdl.handle.net/2445/10632]