Inkjet‐Printed p‐NiO/n‐ZnO Heterojunction Diodes for Photodetection Applications

dc.contributor.authorGonzález, Sergio
dc.contributor.authorVescio, Giovanni
dc.contributor.authorFrieiro Castro, Juan Luis
dc.contributor.authorHauser, Alina
dc.contributor.authorLinardi, Flavio
dc.contributor.authorLópez Vidrier, Julià
dc.contributor.authorOszajca, Marek
dc.contributor.authorHernández Márquez, Sergi
dc.contributor.authorCirera Hernández, Albert
dc.contributor.authorGarrido, Blas
dc.date.accessioned2023-06-19T17:46:00Z
dc.date.available2023-06-19T17:46:00Z
dc.date.issued2022-01-27
dc.date.updated2023-06-19T17:46:00Z
dc.description.abstractTransparent Conducting Oxides (TCOs) are an enticing family of optoelectronic materials which have been proven to increase efficiency when incorporated into perovskite light emitting diode (PE-LED) and organic OLED architectures as transport layers. Solution-processed metal oxide inks have already been demonstrated, although there is still a need for high-quality inkjet-printable metal oxide inks with a thermal post-process below 200 °C. The set of inks in this work are adapted from low-boiling point colloidal suspensions of metal oxide nanoparticles synthesized via flame spray pyrolysis. High quality, pinhole- and wrinkle-free inkjet-printed layers are obtained at low temperatures through vacuum oven post process, as proven by scanning electron microscopy. The crystallinity of the layers is confirmed by X-ray diffraction, showing the expected hexagonal and cubic structures respectively for ZnO and NiO. The thin film layers reach over 70% (ZnO) and 90% (NiO) transparency in the visible spectrum. Their implementation in the inkjet-printed p-n diode shows excellent I-V rectifying behavior with an ON/OFF ratio of two orders of magnitude at ±3 V and a forward threshold voltage of 2 V. Furthermore, the device exhibits an increase in photocurrent around four orders of magnitude when illuminated under a 1-sun solar simulator.
dc.format.extent8 p.
dc.format.mimetypeapplication/pdf
dc.identifier.idgrec733368
dc.identifier.issn2196-7350
dc.identifier.urihttps://hdl.handle.net/2445/199435
dc.language.isoeng
dc.publisherWiley
dc.relation.isformatofReproducció del document publicat a: https://doi.org/10.1002/admi.202300035
dc.relation.ispartofAdvanced Materials Interfaces, 2022, vol. 10, num. 15, p. 1-8
dc.relation.urihttps://doi.org/10.1002/admi.202300035
dc.rightscc-by (c) González, Sergio et al., 2022
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/es/*
dc.sourceArticles publicats en revistes (Enginyeria Electrònica i Biomèdica)
dc.subject.classificationDíodes electroluminescents
dc.subject.classificationÒxids
dc.subject.classificationOptoelectrònica
dc.subject.otherLight emitting diodes
dc.subject.otherOxides
dc.subject.otherOptoelectronics
dc.titleInkjet‐Printed p‐NiO/n‐ZnO Heterojunction Diodes for Photodetection Applications
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/publishedVersion

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