Carregant...
Fitxers
Tipus de document
ArticleVersió
Versió acceptadaData de publicació
Tots els drets reservats
Si us plau utilitzeu sempre aquest identificador per citar o enllaçar aquest document: https://hdl.handle.net/2445/29242
Low dark count geiger mode avalanche photodiodes fabricated in conventional CMOS technologies
Títol de la revista
Director/Tutor
ISSN de la revista
Títol del volum
Recurs relacionat
Resum
Avalanche photodiodes operated in the Geiger mode present very high intrinsic gain and fast time response, which make the sensor an ideal option for those applications in which detectors with high sensitivity and velocity are required. Moreover, they are compatible with conventional CMOS technologies, allowing sensor and front-end electronics integration within the pixel cell. Despite these excellent qualities, the photodiode suffers from high intrinsic noise, which degrades the performance of the detector and increases the memory area to store the total amount of information generated. In this work, a new front-end circuit that allows low reverse bias overvoltage sensor operation to reduce the noise in Geiger mode avalanche photodiode pixel detectors is presented. The proposed front-end circuit also enables to operate the sensor in the gated acquisition mode to further reduce the noise. Experimental characterization of the fabricated pixel with the conventional HV-AMS 0.35µm technology is also presented in this article.
Matèries (anglès)
Citació
Citació
VILELLA FIGUERAS, Eva, ARBAT CASAS, Anna, ALONSO CASANOVAS, Oscar, COMERMA MONTELLS, Albert, TRENADO, J. (juan), VILÀ I ARBONÈS, Anna maria, CASANOVA MOHR, Raimon, GARRIDO BELTRÁN, Lluís, DIÉGUEZ BARRIENTOS, Àngel. Low dark count geiger mode avalanche photodiodes fabricated in conventional CMOS technologies. _Sensor Letters_. 2011. Vol. 9, núm. 6, pàgs. 2408-2411. [consulta: 22 de abril de 2026]. ISSN: 1546-198X. [Disponible a: https://hdl.handle.net/2445/29242]