Document type
ArticleVersion
Published versionPublication date
All rights reserved
Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/128176
Influence of compositionally induced defects on the vibrational properties of device grade Cu2ZnSnSe4 absorbers for kesterite based solar cells
Journal Title
Director/Tutor
Journal ISSN
Volume Title
Related resource
Abstract
This work presents a detailed analysis of the impact of compositionally induced defects on the vibrational properties of Cu2ZnSnSe4 absorbers for kesterite based solar cells. Systematic changes in the intensity of the E and B modes located around the 170, 220, and 250 cm 1 frequency regions, which involve mostly cation vibrations, were observed and analyzed in relation to the occurrence of different kinds of defect clusters involving VCu, ZnCu, ZnSn, CuZn, and SnZn point defects. Additional changes are also interpreted in terms of the appearance of SnSe, ZnSe, and CuSe-like contributions at the 185 and 250 cm 1 spectral regions, respectively. The sensitivity of the Raman measurements to the presence of these kinds of defects corroborates the potential of Raman scattering for point defect assessment in these systems.
Subject
Subject (English)
Citation
Citation
DIMITRIEVSKA, Mirjana, et al. Influence of compositionally induced defects on the vibrational properties of device grade Cu2ZnSnSe4 absorbers for kesterite based solar cells. Applied Physics Letters. 2015. Vol. 106, num. 073903. ISSN 0003-6951. [consulted: 13 of August of 2026]. Available at: https://hdl.handle.net/2445/128176