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2014-03-31

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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/50483

Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors

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http://dx.doi.org/10.1016/j.tsf.2013.08.010

Abstract

In this work, zinc indium tin oxide layers with different compositions are used as the active layer of thin film transistors. This multicomponent transparent conductive oxide is gaining great interest due to its reduced content of the scarce indium element. Experimental data indicate that the incorporation of zinc promotes the creation of oxygen vacancies. In thin-film transistors this effect leads to a higher threshold voltage values. The field-effect mobility is also strongly degraded, probably due to coulomb scattering by ionized defects. A post deposition annealing in air reduces the density of oxygen vacancies and improves the fieldeffect mobility by orders of magnitude. Finally, the electrical characteristics of the fabricated thin-film transistors have been analyzed to estimate the density of states in the gap of the active layers. These measurements reveal a clear peak located at 0.3 eV from the conduction band edge that could be attributed to oxygen vacancies.

Subject

Òxids, Pel·lícules fines, Optoelectrònica, Transistors, Mecànica estadística, Circuits integrats

Subject (English)

Oxides, Thin films, Optoelectronics, Transistors, Statistical mechanics, Integrated circuits

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MARSAL, A., et al. Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors. Thin Solid Films. 2014. Vol. 555, num. 107-111. ISSN 0040-6090. [consulted: 8 of August of 2026]. Available at: https://hdl.handle.net/2445/50483

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