Carregant...
Fitxers
Tipus de document
ArticleVersió
Versió publicadaData de publicació
Tots els drets reservats
Si us plau utilitzeu sempre aquest identificador per citar o enllaçar aquest document: https://hdl.handle.net/2445/25083
Surface roughness in InGaAs Channels of HEMT devices depending on the growth temperature: strain induced or due to alloy decomposition
Títol de la revista
Director/Tutor
ISSN de la revista
Títol del volum
Recurs relacionat
Resum
InAlAs/InGaAs/InP based high electron mobility transistor devices have been structurally and electrically characterized, using transmission electron microscopy and Raman spectroscopy and measuring Hall mobilities. The InGaAs lattice matched channels, with an In molar fraction of 53%, grown at temperatures lower than 530¿°C exhibit alloy decomposition driving an anisotropic InGaAs surface roughness oriented along [1math0]. Conversely, lattice mismatched channels with an In molar fraction of 75% do not present this lateral decomposition but a strain induced roughness, with higher strength as the channel growth temperature increases beyond 490¿°C. In both cases the presence of the roughness implies low and anisotropic Hall mobilities of the two dimensional electron gas.
Matèries
Matèries (anglès)
Citació
Citació
PEIRÓ MARTÍNEZ, Francisca, CORNET I CALVERAS, Albert, MORANTE I LLEONART, Joan ramon, BECK, M., PY, M. a.. Surface roughness in InGaAs Channels of HEMT devices depending on the growth temperature: strain induced or due to alloy decomposition. _Journal of Applied Physics_. 1998. Vol. 83, núm. 12, pàgs. 7537-7541. [consulta: 21 de gener de 2026]. ISSN: 0021-8979. [Disponible a: https://hdl.handle.net/2445/25083]