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Quasi real-time Raman studies on the growth of Cu-In-S thin films
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In this work annealing and growth of CuInS2 thin films is investigated with quasireal-time in situ Raman spectroscopy. During the annealing a shift of the Raman A1 mode towards lower wave numbers with increasing temperature is observed. A linear temperature dependence of the phonon branch of ¿2 cm¿1/100 K is evaluated. The investigation of the growth process (sulfurization of metallic precursors) with high surface sensitivity reveals the occurrence of phases which are not detected with bulk sensitive methods. This allows a detailed insight in the formation of the CuInS2 phases. Independent from stoichiometry and doping of the starting precursors the CuAu ordering of CuInS2 initially forms as the dominating ordering. The transformation of the CuAu ordering into the chalcopyrite one is, in contrast, strongly dependent on the precursor composition and requires high temperatures.
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RUDIGIER, Eveline, et al. Quasi real-time Raman studies on the growth of Cu-In-S thin films. Journal of Applied Physics. 2004. Vol. 95, num. 5153-5158. ISSN 0021-8979. [consulted: 7 of June of 2026]. Available at: https://hdl.handle.net/2445/24807